UTT08N02Z-F

20V N-CHANNEL POWER MOSFET

UTC

UTT08N02Z-F Features

* RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A

* Suit for 1.5V gate drive applications

* Improved dv/dt capability

* Fast switching

* Green device available

* SYMBOL 3.Drain 12 SOT-323 3 2 1 SOT-523 3 2 1 SOT-723 1.Gate 2.Source

* ORDERING INFORMATION Ordering Number Le

UTT08N02Z-F General Description

UTC UTT08N02Z-F is a N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commuta.

UTT08N02Z-F Datasheet (331.58 KB)

UTT08N02Z-F Datasheet Preview — Preview of UTT08N02Z-F PDF

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UTT08N02Z-F

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UTC

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331.58 KB

Description:

20v n-channel power mosfet.

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UTT08N02Z-F 20V N-CHANNEL POWER MOSFET UTC

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UTT08N02Z-F Features

UTT08N02Z-F General Description

Datasheet Details

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