UTT3N10-H - N-CHANNEL MOSFET

UTC

UTT3N10-H Datasheet Preview — Preview of UTT3N10-H PDF

Datasheet Details

Part number	UTT3N10-H
Manufacturer	UTC
File Size	173.99 KB
Description	N-CHANNEL MOSFET
Datasheet	UTT3N10-H-UTC.pdf

UTT3N10-H Product details

Description

The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.

Features

RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A.
High switching speed.
Low grage.
SYMBOL Power MOSFET.

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Published: Apr 19, 2020 |