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10N65Z-Q Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

10N65Z-Q Features

* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 18 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N65ZL-TF

10N65Z-Q General Description

The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe.

10N65Z-Q Datasheet (207.65 KB)

Preview of 10N65Z-Q PDF

Datasheet Details

Part number:

10N65Z-Q

Manufacturer:

Unisonic Technologies

File Size:

207.65 KB

Description:

N-channel power mosfet.

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TAGS

10N65Z-Q N-CHANNEL POWER MOSFET Unisonic Technologies

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