Datasheet4U Logo Datasheet4U.com

30N06-Q Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

30N06-Q Features

* RDS(ON) = 40mΩ@VGS = 10 V, ID=15A

* Ultra low gate charge ( typical 20nC )

* Low reverse transfer Capacitance ( CRSS = typical 80 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability

* SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-22

30N06-Q General Description

The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient .

30N06-Q Datasheet (342.13 KB)

Preview of 30N06-Q PDF

Datasheet Details

Part number:

30N06-Q

Manufacturer:

Unisonic Technologies

File Size:

342.13 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

30N06 N-Channel MOSFET (Inchange Semiconductor)

30N06 N-CHANNEL POWER MOSFET (UTC)

30N06 60V N-Channel Enhancement Mode Power MOSFET (UMW)

30N06G N-CHANNEL POWER MOSFET (UTC)

30N06L N-CHANNEL POWER MOSFET (UTC)

30N06V-Q N-CHANNEL POWER MOSFET (Unisonic Technologies)

30N05 N-Channel MOSFET (Inchange Semiconductor)

30N10 N-Channel MOSFET (Inchange Semiconductor)

30N12 N-Channel MOSFET Transistor (Inchange Semiconductor)

30N15 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

30N06-Q N-CHANNEL POWER MOSFET Unisonic Technologies

Image Gallery

30N06-Q Datasheet Preview Page 2 30N06-Q Datasheet Preview Page 3

30N06-Q Distributor