30N06 N-Channel MOSFET

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: 30N06
Manufacturer: Inchange Semiconductor
File Size: 281.66 KB
Datasheet: 30N06-InchangeSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.05Ω
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and general purpose applicatio

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 105 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

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30N06 N-Channel MOSFET Inchange Semiconductor

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