30N06 Datasheet - Inchange Semiconductor

30N06, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on) ≤0.05Ω
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and general purpose applicatio

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 105 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

30N06-InchangeSemiconductor.pdf