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30N06 Datasheet

The 30N06 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number30N06
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance .
*Static drain-source on-resistance: RDS(on) ≤0.05Ω
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for server and general purpose applications
*ABSOLUTE MAXIMUM RA.
Part Number30N06
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. Thi. * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 30N06L SYMBOL 2.Drain 1.Gate 3.Source ORDER.
Part Number30N06
Description60V N-Channel Enhancement Mode Power MOSFET
ManufacturerUMW
Overview The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ). VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch PWM Application Power management Package Marking and Ordering Information Device Marking Device Dev.

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