3N60 Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

3N60 Features

* VDS = 600V, ID = 3A

* RDS(ON) < 3.6Ω @VGS = 10 V

* Ultra low gate charge ( typical 18 nC )

* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Po

3N60 General Description

The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in po.

3N60 Datasheet (399.37 KB)

3N60 Datasheet Preview — Preview of 3N60 PDF

Datasheet Details

Part number:

3N60

Manufacturer:

Unisonic Technologies

File Size:

399.37 KB

Description:

N-channel power mosfet.

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3N60 N-CHANNEL POWER MOSFET Unisonic Technologies

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3N60 Features

3N60 General Description

Datasheet Details

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Description:

3N60 Distributor