50N06-F - N-CHANNEL POWER MOSFET

Unisonic Technologies

50N06-F Datasheet Preview — Preview of 50N06-F PDF

Datasheet Details

Part number	50N06-F
Manufacturer	Unisonic Technologies
File Size	434.87 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	50N06-F-UnisonicTechnologies.pdf

50N06-F Product details

Description

The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switching mode power appliances.

Features

S.
RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A.
Fast switching capability.
100% avalanche energy specified.
Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252.
SYMBOL 2.Drain 1.Gate 3.Source.

📁 50N06-F Similar Datasheet

50N06-Q - 60V N-CHANNEL POWER MOSFET (UTC)
50N06 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
50N06B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
50N06F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
50N06FI - N-Channel MOSFET (INCHANGE)
50N06H - N-CHANNEL MOSFET (CHONGQING PINGYANG)
50N02-09 - SUB50N02-09 (Vishay Siliconix)
50N024 - SUD50N024 (Vishay Siliconix)

Other Datasheets by Unisonic Technologies

Published: Feb 18, 2016 |