Datasheet4U Logo Datasheet4U.com

50N06-Q Datasheet - UTC

60V N-CHANNEL POWER MOSFET

50N06-Q Features

* RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 50N06L-TN3-R 50N06G-TN3-R Pin Assignment:

50N06-Q General Description

The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies .

50N06-Q Datasheet (210.57 KB)

Preview of 50N06-Q PDF

Datasheet Details

Part number:

50N06-Q

Manufacturer:

UTC

File Size:

210.57 KB

Description:

60v n-channel power mosfet.

📁 Related Datasheet

50N06-F N-CHANNEL POWER MOSFET (Unisonic Technologies)

50N06 N-CHANNEL MOSFET (CHONGQING PINGYANG)

50N06 Low voltage high current power MOSFET (ETC)

50N06 N-Channel MOSFET Transistor (Inchange Semiconductor)

50N06 N-CHANNEL POWER MOSFET (UTC)

50N06 N-CHANNEL MOSFET (KIA)

50N06 Power-Transistor (Tuofeng Semiconductor)

50N06B N-CHANNEL MOSFET (CHONGQING PINGYANG)

50N06F N-CHANNEL MOSFET (CHONGQING PINGYANG)

50N06FI N-Channel MOSFET (INCHANGE)

TAGS

50N06-Q 60V N-CHANNEL POWER MOSFET UTC

Image Gallery

50N06-Q Datasheet Preview Page 2 50N06-Q Datasheet Preview Page 3

50N06-Q Distributor