50NM80-Q
UTC
255.28kb
800v n-channel mosfet. The UTC 50NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, lo
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50NM60 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 50NM60
50A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 50NM60 is a Super Junction MOSFET Structure and.
50N02-09 - SUB50N02-09
(Vishay Siliconix)
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
50N024 - SUD50N024
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SUD50N024-06P
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N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
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ID (A)d
80 6.
50N02409PU54A - SU50N02409PU54A
(Vishay Intertechnology)
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SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
F.
50N025-05P - SUD50N025-05P
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New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
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VDS (V)
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50N03 - Power Transistor
(Tuofeng)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC c.
50N03 - N-CHANNEL MOSFET
(KIA)
KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-re.
50N03 - MOSFET
(GFO)
DESCRIPTION
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.
50N035 - N-Channel FET
(Bay Linear)
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Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect .
50N03LT - PHP50N03LT
(NXP Semiconductors)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resi.
