50N06
CHONGQING PINGYANG
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N-channel mosfet.
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50N02-09 - SUB50N02-09
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FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
50N024 - SUD50N024
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VDS (V)
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VDS (V)
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50N03 - Power Transistor
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50N03 - N-CHANNEL MOSFET
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1.Features
Advanced trench process technology High density cell design for ultra low on-re.
50N03 - MOSFET
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The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.
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50N03LT - PHP50N03LT
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Product specification
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50N04 Datasheet
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PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
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0.0065 at VGS = 4.5 V
ID (A)a, c .
