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50N06-F

Manufacturer: Unisonic Technologies

50N06-F datasheet by Unisonic Technologies.

50N06-F datasheet preview

50N06-F Datasheet Details

Part number 50N06-F
Datasheet 50N06-F-UnisonicTechnologies.pdf
File Size 434.87 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
50N06-F page 2 50N06-F page 3

50N06-F Overview

The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.

50N06-F Key Features

  • RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A
  • Fast switching capability
  • 100% avalanche energy specified
  • Improved dv/dt capability
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

50N06-Q from other manufacturers

View 50N06-Q datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo 50N06-Q 60V N-CHANNEL POWER MOSFET UTC
CHONGQING PINGYANG 50N06 N-CHANNEL MOSFET CHONGQING PINGYANG
ETC 50N06 Low voltage high current power MOSFET ETC
Inchange Semiconductor Logo 50N06 N-Channel MOSFET Transistor Inchange Semiconductor
UTC Logo 50N06 N-CHANNEL POWER MOSFET UTC
Unisonic Technologies logo - Manufacturer

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Part Number Description

50N06-F Distributor

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