50N06-Q Overview
The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
50N06-Q Key Features
- RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
