UG25N120

NPT TRENCH IGBT

Unisonic Technologies

UG25N120 Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C

* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG25N120L-TA

UG25N120 General Description

The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UG25N120 is suitable for the resonant or soft switching appl.

UG25N120 Datasheet (147.54 KB)

UG25N120 Datasheet Preview — Preview of UG25N120 PDF

Datasheet Details

Part number:

UG25N120

Manufacturer:

Unisonic Technologies

File Size:

147.54 KB

Description:

Npt trench igbt.

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UG25N120 NPT TRENCH IGBT Unisonic Technologies

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UG25N120 Features

UG25N120 General Description

Datasheet Details

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