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UG25N120 NPT TRENCH IGBT

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Description

UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT * .
The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

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Datasheet Specifications

Part number
UG25N120
Manufacturer
Unisonic Technologies
File Size
147.54 KB
Datasheet
UG25N120-UnisonicTechnologies.pdf
Description
NPT TRENCH IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG25N120L-TA

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