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UG25N120 - NPT TRENCH IGBT

UG25N120 Description

UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT * .
The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

UG25N120 Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG25N120L-TA

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NPT TRENCH IGBT Unisonic Technologies
Unisonic Technologies UG25N120-like datasheet