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UP9T15G - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • VDS(V)=20V.
  • ID=12 .5A (VGS=4.5V).
  • RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A.
  • RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet Details

Part number UP9T15G
Manufacturer Unisonic Technologies
File Size 354.65 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UP9T15G Datasheet
Additional preview pages of the UP9T15G datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UP9T15G N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP9T15GL-TN3-R UP9T15GP-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-208.
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