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UTC2N3904 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Collector-Emitter Voltage: VCEO=40V.
  • Collector Dissipation: Pc(max)=625mW.
  • Complementary to 2N3906 1 TO-92 1:.

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UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max)=625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO 60 Collector-emitter voltage VCEO 40 Emitter-base voltage VEBO 6 Collector current Ic 200 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX Collector Cut-off Current ICEX VCE=30V, VEB=3V 50 Base Cut-off Current IBL VCE=30V, VEB=3V 50 Collector-base