UTT6N10 - 6A N-CHANNEL POWER MOSFET

Unisonic Technologies

UTT6N10 Datasheet Preview — Preview of UTT6N10 PDF

Datasheet Details

Part number	UTT6N10
Manufacturer	Unisonic Technologies
File Size	229.44 KB
Description	6A N-CHANNEL POWER MOSFET
Datasheet	UTT6N10-UnisonicTechnologies.pdf

UTT6N10 Product details

Description

The UTC UTT6N10 is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge.

Features

RDS(on) ≤ 175 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=1.0A.
High Switching Speed.
SYMBOL 2.Drain 1 TO-252 1 SOT-223 1.Gate 3.Source.

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Published: Dec 4, 2015 |