AI2228 Datasheet (United Monolithic Semiconductors) - 39.5-42.5GHz Q Band 8W High Power Amplifier

AI2228, 39.5-42.5GHz Q Band 8W High Power Amplifier

Input RF port DC Gate voltage, 1st & 2st stage, North DC Gate voltage 3d stage, North DC Gate voltage 4th stage, North DC Drain voltage, 1st & 2st stage, North DC Drain voltage 3d stage, North DC Drain voltage 4th stage, North Output RF port DC Drain voltage 4th stage, South DC Drain voltage 3d stag

AI2228 Advanced Information: AI2228 39.5-42.5GHz Q Band 8W High Power Amplifier GaN Monolithic Microwave IC UMS develops a four stages High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency.

The typical power supply is 20V/290mA (quiescent current).

For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation.

The circuit is manufactured on a space evaluated 0