UJ4C075023K3S
Description
The UJ4C075023K3S is a 750V, 23m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
G (1) 1 23
S (3)
Features w On-resistance RDS(on): 23m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 84n C w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3
Part Number UJ4C075023K3S
Package TO-247-3L
Marking...
