UJ4C075023L8S Datasheet - UnitedSiC

UJ4C075023L8S Silicon Carbide Cascode JFET

The UJ4C075023L8S is a 750V, 23mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers h.

UJ4C075023L8S Features

* w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 122nC w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and C

UJ4C075023L8S-UnitedSiC.pdf