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UJ4C075023L8S

Silicon Carbide Cascode JFET

UJ4C075023L8S Features

* w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 122nC w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and C

UJ4C075023L8S General Description

The UJ4C075023L8S is a 750V, 23mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers h.

UJ4C075023L8S Datasheet (1.17 MB)

Preview of UJ4C075023L8S PDF

Datasheet Details

Part number:

UJ4C075023L8S

Manufacturer:

UnitedSiC

File Size:

1.17 MB

Description:

Silicon carbide cascode jfet.
DATASHEET UJ4C075023L8S TAB TAB D 1 8 TAB 8 1 G (1) KS (2) S (3-8) Part Number UJ4C075023L8S Package MO-229 Marking UJ4C075023 Silicon Car.

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UJ4C075023L8S Silicon Carbide Cascode JFET UnitedSiC

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