MIE-814A2 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Unity Opto Technology

The MIE-814A2 by Unity Opto Technology is a AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE. Below is the official datasheet preview.

Datasheet Details

Part number	MIE-814A2
Manufacturer	Unity Opto Technology
File Size	32.23 KB
Description	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet	MIE-814A2-UnityOptoTechnology.pdf
Additional preview pages of the MIE-814A2 datasheet.

The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

l l l l 2.00(.079) 0.50 (.020) 28 typ (1.102) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm Good spectral matching to Si-Photodetector 2.54NOM. (.100) 2.00±1.00 (.079±.039) C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power.

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Other Datasheets by Unity Opto Technology

MIE-824A4 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824H2 - GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824L3 - GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-111A1 - AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A1 - GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A2 - GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Published: Mar 26, 2005 |