* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-262 SS D G Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Sou
F540ZL
VBsemi
265.01 KB
N-channel 100v mosfet.
F540ZL-VB TO262
F540ZL-VB TO262 Datasheet
N-Channel 100-V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = .
📁 Related Datasheet
F540NS - IRF540NS
(International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
.
F546L - HCMOS 5x3.2mm 2.5V SMD Oscillator
(Fox Electronics)
HCMOS 5x3.2mm 2.5V SMD Oscillator
Model: F540L SERIES
Page 1 of 2
RoHS Compliant / Pb Free
Rev. 7/23/2007
http://.foxonline./need_a_sample.htm.
F546LR - HCMOS 5x3.2mm 2.5V SMD Oscillator
(Fox Electronics)
HCMOS 5x3.2mm 2.5V SMD Oscillator
Model: F540L SERIES
Page 1 of 2
RoHS Compliant / Pb Free
Rev. 7/23/2007
http://.foxonline./need_a_sample.htm.
F5-75R06KE3_B5 - IGBT
(Infineon)
Technische Information / Technical Information
IGBT-Module IGBT-modules
F5-75R06KE3_B5
EconoPACK™3 Modul mit Trench/Feldstopp IGBT3 und Emitter Con.
F5001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F5001H - INTELIGENT POWER SWITCH
(Fuji Electric)
.
F5019 - Froide
(CSF)
.
F501D - 600V Depletion-Mode Power MOSFET
(Perfect Intelligent)
600V Depletion-Mode Power MOSFET
General Features
Proprietary Advanced Planar Technology Depletion Mode (Normally On) ESD improved Capability .
