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FDMS9600S Dual N-Channel MOSFET

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Description

FDMS9600S FDMS9600S Datasheet www.VBsemi.com Dual N-Channel 30V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.0043.

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Datasheet Specifications

Part number
FDMS9600S
Manufacturer
VBsemi
File Size
362.96 KB
Datasheet
FDMS9600S-VBsemi.pdf
Description
Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC PHASE Top View Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA

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