Datasheet Details
- Part number
- FDMS9600S
- Manufacturer
- VBsemi
- File Size
- 362.96 KB
- Datasheet
- FDMS9600S-VBsemi.pdf
- Description
- Dual N-Channel MOSFET
FDMS9600S Description
FDMS9600S FDMS9600S Datasheet www.VBsemi.com Dual N-Channel 30V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.0043.
FDMS9600S Features
* Halogen-free According to IEC 61249-2-21
Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested
FDMS9600S Applications
* Set Top Box
* Low Current DC/DC
PHASE
Top View
Bottom View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA
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