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FS70SM-06-VB
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
FS70SM-06-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
www.VBsemi.com
60
0.005
150 Single TO-247
FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested
TO-3P
D
G D
S
D (TAB)
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.