IPD78CN10N N-Channel MOSFET

VBsemi

Description

IPD78CN10N G IPD78CN10N G Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4..

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Datasheet Specifications

Part number: IPD78CN10N
Manufacturer: VBsemi
File Size: 345.16 KB
Datasheet: IPD78CN10N-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® power MOSFET

Applications

* D
* Primary side switch www. VBsemi. com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Continuous Source-Drain Diode

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IPD78CN10N N-Channel MOSFET VBsemi

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