IPD640N06LG N-Channel MOSFET

VBsemi

Description

IPD640N06LG www.VBsemi.com IPD640N06LG N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = .

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Datasheet Specifications

Part number: IPD640N06LG
Manufacturer: VBsemi
File Size: 301.14 KB
Datasheet: IPD640N06LG-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature Available RoHS
* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20

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IPD640N06LG N-Channel MOSFET VBsemi

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