* TrenchFET® Power MOSFET
* 175 °C Junction Temperature Available RoHS
* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20
IPD640N06LG Datasheet (301.14 KB)
IPD640N06LG
VBsemi
301.14 KB
N-channel mosfet.
IPD640N06LG
www.VBsemi.com
IPD640N06LG N-Channel 6 0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.025 at VGS = 10 V
0.030 at VGS = .
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