IPD64CN10NG Datasheet, Transistor, Infineon Technologies

IPD64CN10NG Features

• Transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-

PDF File Details

Part number:

IPD64CN10NG

Manufacturer:

Infineon ↗ Technologies

File Size:

405.36kb

Download:

📄 Datasheet

Description:

Power transistor.

TAGS

IPD64CN10NG

Infineon Technologies

📁 Related Datasheet

IPD640N06L - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating te.

IPD640N06L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤64mΩ ·Enhancement mode: ·100% avalanche .

IPD640N06LG - N-Channel MOSFET (VBsemi)
IPD640N06LG .VBsemi. IPD640N06LG N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = .

IPD640N06LG - Power Transistor (Infineon Technologies)
IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °.

IPD600N25N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanch.

IPD600N25N3 - Power-Transistor (Infineon)
IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD600N25N3G - Power Transistor (Infineon Technologies)
IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD60N10S4-12 - Power-Transistor (Infineon)
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating .

IPD60N10S4L-12 - Power-Transistor (Infineon)
OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • G.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.