Datasheet4U Logo Datasheet4U.com

IPD60N10S4L-12 Datasheet - Infineon

Power-Transistor

IPD60N10S4L-12 Features

* N-channel - Enhancement mode

* AEC qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

* Green Product (RoHS compliant)

* 100% Avalanche tested IPD60N10S4L-12 Product Summary V DS R DS(on),max ID 100 V 12 mW 60 A PG-TO252-3-313

IPD60N10S4L-12 Datasheet (129.45 KB)

Preview of IPD60N10S4L-12 PDF

Datasheet Details

Part number:

IPD60N10S4L-12

Manufacturer:

Infineon ↗

File Size:

129.45 KB

Description:

Power-transistor.

📁 Related Datasheet

IPD60N10S4-12 Power-Transistor (Infineon)

IPD600N25N3 N-Channel MOSFET (INCHANGE)

IPD600N25N3 Power-Transistor (Infineon)

IPD600N25N3G Power Transistor (Infineon Technologies)

IPD60R170CFD7 MOSFET (Infineon)

IPD60R170CFD7 N-Channel MOSFET (INCHANGE)

IPD60R180C7 MOSFET (Infineon)

IPD60R180C7 N-Channel MOSFET (INCHANGE)

IPD60R180CM8 MOSFET (Infineon)

IPD60R180P7 MOSFET (Infineon)

TAGS

IPD60N10S4L-12 Power-Transistor Infineon

Image Gallery

IPD60N10S4L-12 Datasheet Preview Page 2 IPD60N10S4L-12 Datasheet Preview Page 3

IPD60N10S4L-12 Distributor