IPD60N10S4L-12 Power-Transistor

Infineon

IPD60N10S4L-12 Description

OptiMOSTM-T2 Power-Transistor .

IPD60N10S4L-12 Features

* N-channel - Enhancement mode
* AEC qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green Product (RoHS compliant)
* 100% Avalanche tested IPD60N10S4L-12 Product Summary V DS R DS(on),max ID 100 V 12 mW 60 A PG-TO252-3-313

📥 Download Datasheet

IPD60N10S4L-12 Datasheet Preview — Preview of IPD60N10S4L-12 PDF

Datasheet Details

Part number: IPD60N10S4L-12
Manufacturer: Infineon ↗
File Size: 129.45 KB
Datasheet: IPD60N10S4L-12-Infineon.pdf
Description: Power-Transistor

📁 Related Datasheet

IPD600N25N3 - N-Channel MOSFET (INCHANGE)
IPD600N25N3G - Power Transistor (Infineon Technologies)
IPD60R180P7S - N-Channel MOSFET (INCHANGE)
IPD60R1K0CE - MOSFET (Infineon Technologies)
IPD60R1K4C6 - Power Transistor (Infineon Technologies)
IPD60R1K5CE - MOSFET (Infineon Technologies)
IPD60R280CFD7 - N-Channel MOSFET (INCHANGE)
IPD60R280P7 - N-Channel MOSFET (INCHANGE)

📌 All Tags

Power-Transistor Infineon

Infineon IPD60N10S4L-12-like datasheet

IPD60N10S4-12 - Power-Transistor
IPD60R170CFD7 - MOSFET
IPD60R180C7 - 600V MOSFET
IPD60R180CM8 - MOSFET
IPD60R180P7 - MOSFET
IPD60R210PFD7S - 600V MOSFET