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IPD600N25N3 N-Channel MOSFET

IPD600N25N3 Description

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3 *.

IPD600N25N3 Features

* Static drain-source on-resistance: RDS(on)≤60mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

IPD600N25N3 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IPD600N25N3
Manufacturer
INCHANGE
File Size
238.46 KB
Datasheet
IPD600N25N3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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