IPD60N10S4-12 Power-Transistor

Infineon

IPD60N10S4-12 Description

OptiMOSTM-T2 Power-Transistor .

IPD60N10S4-12 Features

* N-channel - Normal Level - Enhancement mode
* AEC qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green Product (RoHS compliant)
* 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.2 mW 60 A

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IPD60N10S4-12 Datasheet Preview — Preview of IPD60N10S4-12 PDF

Datasheet Details

Part number: IPD60N10S4-12
Manufacturer: Infineon ↗
File Size: 284.91 KB
Datasheet: IPD60N10S4-12-Infineon.pdf
Description: Power-Transistor

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Power-Transistor Infineon

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