IPD60N10S4-12 Datasheet - Infineon

IPD60N10S4-12 Power-Transistor

IPD60N10S4-12 Features

* N-channel - Normal Level - Enhancement mode

* AEC qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

* Green Product (RoHS compliant)

* 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.2 mW 60 A

Datasheet Details

IPD60N10S4-12

284.91 KB

Power-transistor.

IPD60N10S4-12 Distributor

📁 Related Datasheet

IPD60N10S4L-12 Power-Transistor (Infineon)

IPD600N25N3 N-Channel MOSFET (INCHANGE)

IPD600N25N3 Power-Transistor (Infineon)

IPD600N25N3G Power Transistor (Infineon Technologies)

IPD60R170CFD7 MOSFET (Infineon)

IPD60R170CFD7 N-Channel MOSFET (INCHANGE)

IPD60R180C7 600V MOSFET (Infineon)

IPD60R180C7 N-Channel MOSFET (INCHANGE)

TAGS

IPD60N10S4-12 IPD60N10S4-12 Power-Transistor Infineon