Datasheet Details
- Part number
- SI2302DS-T1-GE3
- Manufacturer
- VBsemi
- File Size
- 323.58 KB
- Datasheet
- SI2302DS-T1-GE3-VBsemi.pdf
- Description
- N-Channel MOSFET
SI2302DS-T1-GE3 Description
SI2302DS-T1-GE3 www.VBsemi.com SI2302DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.
SI2302DS-T1-GE3 Features
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
SI2302DS-T1-GE3 Applications
* DC/DC Converters
* Load Switch for Portable Applications
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
📁 Related Datasheet
📌 All Tags