SI2302DS-T1-GE3 Datasheet - VBsemi

SI2302DS-T1-GE3, N-Channel MOSFET

SI2302DS-T1-GE3 www.VBsemi.com SI2302DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.

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Datasheet Details

Part number:

SI2302DS-T1-GE3

Manufacturer:

VBsemi

File Size:

323.58 KB

Description:

N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* DC/DC Converters
* Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C

SI2302DS-T1-GE3 Distributors

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SI2302DS-T1-GE3 N-Channel MOSFET VBsemi

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