SI2300 Datasheet PDF - Kexin N-Channel MOSFET Specs

SI2300 - N-Channel MOSFET

Datasheet Summary

Features

VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 Pulsed Drain Current Power Dissipation Thermal Resistance.

Datasheet Details

Part number	SI2300
Manufacturer	Kexin
File Size	241.31 KB
Description	N-Channel MOSFET
Datasheet	SI2300 Datasheet
Additional preview pages of the SI2300 datasheet.

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Full PDF Text Transcription

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SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±10 5.0 15 1.25 100 150 -55 to 150 Unit V A W /W www.kexin.com.

Published: Nov 27, 2018 |