SI2301BDS-T1-GE3 Datasheet - VBsemi

SI2301BDS-T1-GE3, P-Channel MOSFET

SI2301BDS-T1-GE3 www.VBsemi.com SI2301BDS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10 .

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Datasheet Details

Part number:

SI2301BDS-T1-GE3

Manufacturer:

VBsemi

File Size:

311.34 KB

Description:

P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* Load Switch
* PA Switch
* DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Puls

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SI2301BDS-T1-GE3 P-Channel MOSFET VBsemi

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