Datasheet Details
- Part number
- SI2301BDS-T1-GE3
- Manufacturer
- VBsemi
- File Size
- 311.34 KB
- Datasheet
- SI2301BDS-T1-GE3-VBsemi.pdf
- Description
- P-Channel MOSFET
SI2301BDS-T1-GE3 Description
SI2301BDS-T1-GE3 www.VBsemi.com SI2301BDS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10 .
SI2301BDS-T1-GE3 Features
* Halogen-free According to IEC 61249-2-21
Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
SI2301BDS-T1-GE3 Applications
* Load Switch
* PA Switch
* DC/DC Converters
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Puls
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