Si2301BD Datasheet - Vishay Siliconix

Si2301BD P-Channel MOSFET

Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V ID (A)b - 2.4 - 2.0 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301BDS-T1 S 2 Top View Si2301 BDS (L1) Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b .

Si2301BD_VishaySiliconix.pdf