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P-channel mosfet.
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SI2301A - P-Channel MOSFET
(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
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SI2301 - P-Channel MOSFET
(JinYu)
20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
130mΩ 190mΩ
Features Advanced trench pr.
SI2301 - P-Channel MOSFET
(YANGJING)
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
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FEATURE TrenchFET Power MOSFET
APPLIC.
SI2301 - P-Channel Enhancement Mode Field Effect Transistor
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omponents 20736 Marilla Street Chatsworth # $
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SI2301 - P-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
SI2301
Rev.E Mar.-2016
DATA SHEET
/ Descriptions SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
,MOS 。 Trench FET Pow.
SI2301 - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel Enhancement MOSFET SI2301 (KI2301)
MOSFET
■ Features
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5.
Si2301 - P-Channel MOSFET
(SiPU)
Si2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2301B - P-Channel MOSFET
(UMW)
UMW R
UMW SI2301B
UMW SI2301B P-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
-20 V
120 mΩ@-4.5V 150 mΩ@-2.5V
ID
2.5 A
SOT-23
1. GATE 2. SOURCE.
Si2301BD - P-Channel MOSFET
(Vishay Siliconix)
Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V
ID (A).
SI2301BDS - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 2.5 V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V
I.
