Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2301
D
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millimeter Mi
SI2300, HOTTECH
Plastic-Encapsulate Mosfets
FEATURES
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval.
SI2300, MCC
MCC R
Micro Commercial Components
Micro Commercial Components 130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
SI2300
Features
• Ha.
Si2300, SiPU
Si2300
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2300DS, Vishay Siliconix
.vishay.
Si2300DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
Marking code: P2
1 G Top View
2 S
FEATURES
• TrenchFET.
