* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2312 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF
SI2312
JinYu
1.83 MB
20v n-channel mosfet.
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m.
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