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Si2312BDS - N-Channel MOSFET

Si2312BDS Description

N-Channel 20 V (D-S) MOSFET Si2312BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at V.

Si2312BDS Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2312BDS (M2)
* Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-fre

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