SI2312B
MCC
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N-channel mosfet.
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SI2312 - 20V N-Channel MOSFET
(JinYu)
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m.
Si2312 - N-Channel MOSFET
(SiPU)
Si2312
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2312 - N-Channel MOSFET
(MCC)
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
SI2312 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
SI2312
Rev.E Mar.-2016
DATA SHEET
/ Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
。 Trench FET Power MO.
Si2312BDS - N-Channel MOSFET
(Vishay)
N-Channel 20 V (D-S) MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at V.
Si2312CDS - N-Channel MOSFET
(Vishay)
New Product
Si2312CDS
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5.
SI2312CDS-T1-GE3 - N-Channel MOSFET
(VBsemi)
SI2312CDS-T1-GE3 N-Channel 20 V (D-S) MOSFET
.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0..
SI2312DS - N-Channel MOSFET
(Vishay Siliconix)
N-Channel 20 -V (D-S) MOSFET
Si2312DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS .
SI2310 - N-channel FET
(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
SI2310 - N-Channel Power MOSFET
(CCSemi)
MOSFET
N-Channel Power MOSFET
SI2310
Features
◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device
Absolute Maximum Ratings Ta=2.