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SI2312CDS-T1-GE3 N-Channel MOSFET

SI2312CDS-T1-GE3 Description

SI2312CDS-T1-GE3 N-Channel 20 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0..

SI2312CDS-T1-GE3 Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

SI2312CDS-T1-GE3 Applications

* DC/DC Converters
* Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C

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Datasheet Details

Part number
SI2312CDS-T1-GE3
Manufacturer
VBsemi
File Size
845.82 KB
Datasheet
SI2312CDS-T1-GE3-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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