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SI2306 - 20V N-Channel Enhancement Mode MOSFET

SI2306 Description

SI2306 20V N-Channel Enhancement Mode MOSFET .

SI2306 Features

* VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40

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Datasheet Details

Part number
SI2306
Manufacturer
JinYu
File Size
546.12 KB
Datasheet
SI2306-JinYu.pdf
Description
20V N-Channel Enhancement Mode MOSFET

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20V N-Channel Enhancement Mode MOSFET JinYu
JinYu SI2306-like datasheet

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