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SI2306

20V N-Channel Enhancement Mode MOSFET

SI2306 Features

* VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40

SI2306 Datasheet (546.12 KB)

Preview of SI2306 PDF

Datasheet Details

Part number:

SI2306

Manufacturer:

JinYu

File Size:

546.12 KB

Description:

20v n-channel enhancement mode mosfet.

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SI2306 20V N-Channel Enhancement Mode MOSFET JinYu

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