SI2300A
Features
V(BR)DSS=20V ID=6A RDS(ON)<25mΩ(VGS=4.5V) RDS(ON)<34mΩ(VGS=2.5V) Trench FET Power MOSFET
3.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
4.Absolute Maximum Ratings TA= 25°C
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
2.Applications
Battery protection Load switch Power management
Symbol VDS VGS ID IS PD RθJA TJ TSTG
Rating 20 ±12 6 0.6 1.25
312.5 150 -55~+150
Units V V A A W
°C/W °C °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
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.umw-ic.
UMW SI2300A
20V N-Channe I MOSFET
5.Electrical Characteristics TA= 25°C
Parameter Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a Diode forward...
