SI2300DS Datasheet, mosfet equivalent, Vishay Siliconix

PDF File Details

Part number: SI2300DS

Manufacturer: Vishay (https://www.vishay.com/) Siliconix

File Size: 239.68KB

Download: 📄 Datasheet

Description: N-Channel MOSFET

Datasheet Preview: SI2300DS 📥 Download PDF (239.68KB)

SI2300DS Features and benefits


* TrenchFET® power MOSFET
* 100 % Rg tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* .

SI2300DS Application


* DC/DC converter for portable devices
* Load switch D PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V.

Image gallery

Page 2 of SI2300DS Page 3 of SI2300DS

TAGS

SI2300DS
N-Channel
MOSFET
Vishay Siliconix

📁 Related Datasheet

SI2300DS-T1-GE3 - N-Channel MOSFET (VBsemi)
SI2300DS-T1-GE3 www.VBsemi.com SI2300DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.

SI2300 - N-Channel MOSFET (Kexin)
SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A.

SI2300 - N-Channel MOSFET (HAOCHANG)
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Features VDS=20V,RDS(ON)=40m @VGS=.

SI2300 - N-Channel MOSFET (CCSemi)
MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.

SI2300 - Plastic-Encapsulate Mosfets (HOTTECH)
Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval.

SI2300 - N-Channel MOSFET (MCC)
MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-701-4933 SI2300 Features • Ha.

Si2300 - N-Channel MOSFET (SiPU)
Si2300 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.

SI2300 - 20V N-Channel MOSFET (JinYu)
20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc.

SI2301 - P-Channel MOSFET (JinYu)
20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr.

SI2301 - P-Channel MOSFET (YANGJING)
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts