SI2301DS Datasheet - Vishay Siliconix

SI2301DS P-Channel MOSFET

Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V ID (A) - 2.3 - 1.9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1) Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Pow.

SI2301DS Datasheet (55.56 KB)