SI2306DS
Vishay ↗ Siliconix
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N-channel mosfet.
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Si2306 - N-Channel Enhancement Mode Field Effect Transistor
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Si2306
N-Channel Enhancement Mode Field Effect Transistor
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Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2306 - N-Channel Enhancement Mode Field Effect Transistor
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omponents 20736 Marilla Street Chatsworth # $
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SI2306 - N-CHANNEL MOSFET
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SI2306
Rev.E Mar.-2016
DATA SHEET
/ Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
, MOS 。 Trench FET Po.
SI2306 - 20V N-Channel Enhancement Mode MOSFET
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20V N-Channel Enhancement Mode MOSFET
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VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V
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Si2306BDS - N-Channel 30-V (D-S) MOSFET
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0755-83307717
.ping-web.
sales@ping-web.
Si2306BDS
Vishay Siliconix
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VDS (V) 30 RDS(on) .
SI2300 - N-Channel MOSFET
(Kexin)
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MOSFIECT
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VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A.
SI2300 - N-Channel MOSFET
(HAOCHANG)
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS
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VDS=20V,RDS(ON)=40m @VGS=.
SI2300 - N-Channel MOSFET
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N-Channel Enhancement Mode Field Effect Transistor
SI2300
Features
◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.
SI2300 - Plastic-Encapsulate Mosfets
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SI2300 - N-Channel MOSFET
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Micro Commercial Components
Micro Commercial Components 130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
SI2300
Features
• Ha.
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