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Si2306 - N-Channel Enhancement Mode Field Effect Transistor

Si2306 Description

Si2306 N-Channel Enhancement Mode Field Effect Transistor .

Si2306 Features

* Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Sourc

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Datasheet Details

Part number
Si2306
Manufacturer
SiPU
File Size
112.91 KB
Datasheet
Si2306-SiPU.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor SiPU
SiPU Si2306-like datasheet

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