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Si2306 Datasheet - SiPU

Si2306 N-Channel Enhancement Mode Field Effect Transistor

Si2306 Features

* Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Sourc

Si2306 Datasheet (112.91 KB)

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Datasheet Details

Part number:

Si2306

Manufacturer:

SiPU

File Size:

112.91 KB

Description:

N-channel enhancement mode field effect transistor.

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TAGS

Si2306 N-Channel Enhancement Mode Field Effect Transistor SiPU

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