SSF84W
VBsemi
235.44kb
P-channel mosfet.
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SSF8421 - MOSFET
(Silikron)
SSF8421
GENERAL FEATURES
●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V
●P-Channel VDS = -20V,ID = -3.5A RDS(ON) .
SSF84W - P-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSF84W
-0.13A , -50V , RDS(ON) 10Ω P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” specifi.
SSF80100 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
75V
RDS(on) 8mΩ(typ.)
ID 80A ①
Features and Benefits:
TO220
Advanced MOS.
SSF80N06A - Advanced Power MOSFET
(Samsung Electronics)
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SSF8205 - 20V Dual N-Channel MOSFET
(GOOD-ARK)
SSF8205
20V Dual N-Channel MOSFET
Main Product Characteristics
D1
VDSS RDS(on) ID
20V 20mΩ (typ.) 4A
SOT-23-6L Marking and Pin Assignment
D2 G2
G.
SSF8205 - MOSFET
(Silikron)
SSF8205
Main Product Characteristics:
D1 D2
VDSS RDS(on) ID
20V 20mohm(typ.) 4A
SOT23-6 Marking and pin Assignment
G1
G2
S1
S2
Schematic diagra.
SSF8205A - 20V N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65.
SSF8205A - low gate charge and operation
(Silikron)
SSF8205A
DESCRIPTION
The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.
SSF8205U - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
18V
RDS(on) 20mohm(typ.) ID 4.5A
SOT23-6
Features and Benefits:
Advanced t.
SSF8205UH2 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
18V
RDS(on) 20mohm(typ.) ID 4.5A
TSSOP-8
Features and Benefits:
Advanced tr.
