* Advanced trench MOSFET process technology Ideal for battery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150°C operating temperature Description The SSF8205 utilizes the la
SSF8205
GOOD-ARK
750.66 KB
20v dual n-channel mosfet.
SSF8205
20V Dual N-Channel MOSFET
Main Product Characteristics
D1
VDSS RDS(on) ID
20V 20mΩ (typ.) 4A
SOT-23-6L Marking and Pin Assignment
D2 G2
G.
📁 Related Datasheet
SSF8205 - MOSFET
(Silikron)
SSF8205
Main Product Characteristics:
D1 D2
VDSS RDS(on) ID
20V 20mohm(typ.) 4A
SOT23-6 Marking and pin Assignment
G1
G2
S1
S2
Schematic diagra.
SSF8205A - 20V N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65.
SSF8205A - low gate charge and operation
(Silikron)
SSF8205A
DESCRIPTION
The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.
SSF8205U - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
18V
RDS(on) 20mohm(typ.) ID 4.5A
SOT23-6
Features and Benefits:
Advanced t.
SSF8205UH2 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
18V
RDS(on) 20mohm(typ.) ID 4.5A
TSSOP-8
Features and Benefits:
Advanced tr.
SSF8205VA - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
20V
RDS(on) 19.6mΩ (typ.)
ID
6A
TSSOP-8
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF8233EJ4 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
20V
RDS(on) 6.6mΩ (typ.)
ID
11A
DFN2*3-6L
Features and Benefits:
Advanced MOSFET process technology Spec.
SSF80100 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
75V
RDS(on) 8mΩ(typ.)
ID 80A ①
Features and Benefits:
TO220
Advanced MOS.
