SSF80100 Datasheet, Mosfet, Silikron

SSF80100 Features

• Mosfet TO220 
• Advanced MOSFET process technology
• Special designed for motor control, PWM, load switching etc.
• Ultra low on-resistance with low gate charge

PDF File Details

Part number:

SSF80100

Manufacturer:

Silikron

File Size:

434.68kb

Download:

📄 Datasheet

Description:

Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava

SSF80100 Application

• Applications   Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Cu

TAGS

SSF80100

Silikron

📁 Related Datasheet

SSF80N06A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .

SSF8205 - 20V Dual N-Channel MOSFET (GOOD-ARK)
SSF8205 20V Dual N-Channel MOSFET Main Product Characteristics D1 VDSS RDS(on) ID 20V 20mΩ (typ.) 4A SOT-23-6L Marking and Pin Assignment D2 G2 G.

SSF8205 - MOSFET (Silikron)
SSF8205 Main Product Characteristics: D1 D2 VDSS RDS(on) ID 20V 20mohm(typ.) 4A SOT23-6 Marking and pin Assignment G1 G2 S1 S2 Schematic diagra.

SSF8205A - 20V N-Channel MOSFET (GOOD-ARK)
DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65.

SSF8205A - low gate charge and operation (Silikron)
SSF8205A DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.

SSF8205U - MOSFET (Silikron)
                                 Main Product Characteristics: VDSS 18V RDS(on) 20mohm(typ.) ID 4.5A SOT23-6  Features and Benefits: „ Advanced t.

SSF8205UH2 - MOSFET (Silikron)
                                 Main Product Characteristics: VDSS 18V RDS(on) 20mohm(typ.) ID 4.5A TSSOP-8 Features and Benefits: „ Advanced tr.

SSF8205VA - MOSFET (Silikron)
Main Product Characteristics: VDSS 20V RDS(on) 19.6mΩ (typ.) ID 6A TSSOP-8 Features and Benefits:  Advanced MOSFET process technology  Specia.

SSF8233EJ4 - MOSFET (Silikron)
Main Product Characteristics: VDSS 20V RDS(on) 6.6mΩ (typ.) ID 11A DFN2*3-6L Features and Benefits:  Advanced MOSFET process technology  Spec.

SSF8421 - MOSFET (Silikron)
SSF8421 GENERAL FEATURES ●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V ●P-Channel VDS = -20V,ID = -3.5A RDS(ON) .