Description
Main Product Characteristics SSF8970 80V N-Channel MOSFET VDSS 80V RDS(on) 2.6mΩ (typ.) ID 200A GDS TO-220 Schematic Diagram .
The SSF8970 utilizes the latest trench processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating.
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Units
Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25°C) Drain Current
* Continuous (TC=100°C) Drain Current
* Pulsed1 Single Pulse Avalanche Energy2 Single